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| FDMC2523P P-Channel QFET(R) September 2006 FDMC2523P P-Channel QFET(R) -150V, -3A, 1.5 Features Low Crss ( typical 10pF) Fast Switching Low gate charge ( typical 6.2 nC ) Improved dv / dt capability RoHS compliant tm General Description These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. Application Active Clamp Switch Bottom 6 7 8 D D D D Top 5 6 2 1 S S S G 5 4 3 2 1 7 8 4 3 MLP 3.3x3.3 MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG TL dv/dt Power Dissipation Parameter Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (Tc=25C) - Continuous (Tc=100C) - Pulsed (Steady State) Operating and Storage Temperature Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Peak Diode Recovery dv/dt (Note 2) Ratings -150 30 -3 -1.8 -12 25 -55 to +150 300 -5 W C C V/ns A Units V V Thermal Characteristics R R R JC JA JA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) (Note 1b) 5 52 108 C/W C/W C/W Package Marking and Ordering Information Device Marking FDMC2523P Device FDMC2523P Package MLP 3.3X3.3 Reel Size 7" Tape Width 8mm Quantity 3000 units (c)2006 Fairchild Semiconductor Corporation FDMC2523P Rev. B1 1 www.fairchildsemi.com FDMC2523P P-Channel QFET(R) Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250 A, VGS = 0V ID = -250 A, referenced to 25C VDS = -150V, VGS = 0V TJ= 125C VGS = 30V, VDS = 0V -150 -138 -1 -10 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = -250 A ID = -250 A, referenced to 25C VGS = -10V, ID = -1.5A VGS = -10V, ID = -1.5A,TJ = 125C VDS = -40V, ID = -1.5A ( Note 4) -3 -3.8 6 1.1 2.0 1.4 1.5 3.6 S -5 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = -25V, VGS = 0V, f = 1MHz f = 1MHz 200 60 10 7.5 270 80 15 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain "Miller"Charge VDS= -75V, ID = -3A VGS = -10V (Note 3,4) VDD = -75V, ID = -3A VGS = -10V, RGS = 25 (Note 3,4) 15 11 19 13 6.2 1.4 3.3 27 20 35 24 9 ns ns ns ns nC nC nC Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain -Source Diode Forward Current Maximum Pulse Drain -Sourse Diode Forward Current Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS =-3A IF = -3A, di/dt = 100A/ s (Note 3) -1.8 93 0.27 -3 -12 -5 A A V ns nC Notes: 1: R JA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R JC is guaranteed by design while R CA is determined by the user's board design. a) 52C/W when mounted on a 1 in2 pad of 2 oz copper b) 108C/W when mounted on a minimum pad of 2 oz coppeer. Scale 1:1 on letter size paper 2: ISD -3 A, dl/dt 300A/us, VDD BVDSS, Starting TJ = 25 C 3: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0% 4: Essentially independent of operating temperature. FDMC2523P Rev. B1 2 www.fairchildsemi.com FDMC2523P P-Channel QFET(R) Typical Characteristics TJ = 25C unless otherwise noted NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3.0 - ID, DRAIN CURRENT (A) 1.6 PULSE DURATION = 300 s DUTY CYCLE = 0.2%MAX 2.5 2.0 1.5 1.0 0.5 0.0 0 VGS = -10V PULSE DURATION = 300 s DUTY CYCLE = 0.2%MAX VGS = -8V VGS = -7V VGS = -9V VGS = -6V 1.4 VGS = -6V VGS = -8V 1.2 VGS = -7V VGS = -9V 1.0 VGS = -10V 2 4 6 8 -VDS, DRAIN TO SOURCE VOLTAGE (V) 10 0.8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -ID, DRAIN CURRENT(A) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 4.0 rDS(on), DRAIN TO SOURCE ON-RESISTANCE ( ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.1 1.8 1.5 1.2 0.9 0.6 0.3 -60 ID = -3A VGS = -10V 3.5 3.0 2.5 2.0 1.5 1.0 5 6 7 PULSE DURATION = 300 s DUTY CYCLE = 0.2%MAX ID = -0.75A TJ = 125oC TJ = 25oC -30 0 30 60 90 120 TJ, JUNCTION TEMPERATURE (oC) 150 8 9 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature - IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 10 VGS = 0V 3.0 - ID, DRAIN CURRENT (A) 2.5 2.0 1.5 1.0 0.5 TJ = -55oC TJ = 125oC TJ = 25oC PULSE DURATION = 300 s DUTY CYCLE = 0.2%MAX 1 TJ = 125oC 0.1 0.01 1E-3 1E-4 0.0 TJ = 25oC TJ = -55oC 0.0 2 3 4 5 6 7 -VGS, GATE TO SOURCE VOLTAGE (V) 8 0.5 1.0 1.5 2.0 2.5 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMC2523P Rev. B1 3 www.fairchildsemi.com FDMC2523P P-Channel QFET(R) Typical Characteristics TJ = 25C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = -50V Ciss CAPACITANCE (pF) 8 VDD = -100V 100 Coss f = 1MHz VGS = 0V 6 VDD = -75V 10 Crss 4 2 0 0 1 2 3 4 5 6 7 Qg, GATE CHARGE(nC) 1 0 25 50 75 100 125 -VDS, DRAIN TO SOURCE VOLTAGE (V) 150 Figure 7. Gate Charge Characteristics IAS, AVALANCHE CURRENT(A) 4 Figure 8. Capacitance vs Drain to Source Voltage 1.0 -ID, DRAIN CURRENT (A) 0.8 VGS = -10V 1 TJ = 125oC TJ = 25oC 0.6 0.4 0.2 R JA = 52oC/W 0.2 10 0 10 1 10 2 10 3 10 4 10 5 10 6 0.0 25 50 75 100 125 150 tAV, TIME IN AVALANCHE(ms) TA, AMBIENT TEMPERATURE(oC) Figure 9. Unclamped Inductive Switching Capability 50 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature P(PK), PEAK TRANSIENT POWER (W) - ID, DRAIN CURRENT (A) 500 SINGLE PULSE R JA = 108 C/W TSINGLE PULSE A = 25 C R JA = 108oC/W TA = 25oC/W o o 10 rDS(ON) LIMIT 10us 100us 100 1 1ms 10ms 0.1 VGS = -10V SINGLE PULSE R JA = 108oC/W TC = 25oC 100ms 1s 10s DC 10 0.01 1E-3 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) 500 1 1E-3 0.01 0.1 1 10 t, PULSE WIDTH (s) 100 1000 Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation FDMC2523P Rev. B1 4 www.fairchildsemi.com FDMC2523P P-Channel QFET(R) Typical Characteristics TJ = 25C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, Z JA 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM t1 t2 SINGLE PULSE 0.01 0.005 1E-3 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x Z JA x R JA + TA 0.1 1 10 t, RECTANGULAR PULSE DURATION (s) 100 1000 Figure 13. Transient Thermal Response Curve FDMC2523P Rev. B1 5 www.fairchildsemi.com FDMC2523P P-Channel QFET(R) Dimensional Outline and Pad Layout FDMC2523P Rev. B1 6 www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Rev. I20 |
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